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| BCR3KM-12 Triac Low Power Use REJ03G0312-0200 Rev.2.00 Nov.09.2004 Features * IT(RMS) : 3 A * VDRM : 600 V * IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note3 * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Electric rice cooker, electric pot, and controller for other heater Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.2.00, Nov.09.2004, page 1 of 6 BCR3KM-12 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT(RMS) ITSM I2 t PGM PG(AV) VGM IGM Tj Tstg -- Viso Ratings 3.0 30 3.7 3 0.3 6 0.5 - 40 to +125 - 40 to +125 2.0 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 111C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 I II III I II III Symbol IDRM VTM VFGT I VRGT I VRGT III IFGT I IRGT I IRGT III VGD Rth(j-c) Rth(j-a) Min. -- -- -- -- -- -- -- -- 0.2 -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 15Note3 15Note3 15Note3 -- 4.0 50 Unit mA V V V V mA mA mA V C/W C/W Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 4.5 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2VDRM Junction to caseNote4 Junction to ambient Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Thermal resistance Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. High sensitivity (IGT 10 mA) is also available. (IGT item: 1) 4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Rev.2.00, Nov.09.2004, page 2 of 6 BCR3KM-12 Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 40 Rated Surge On-State Current Tj = 25C Surge On-State Current (A) 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) 102 7 5 3 2 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 Typical Example Gate Voltage (V) 101 7 5 3 2 PGM = 3W PG(AV) = 0.3W IGM = 0.5A IRGT III VGT IFGT I, IRGT I 100 7 5 3 2 IRGT I IFGT I, IRGT III VGD = 0.2V 10-1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 -60 -40 -20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 0 20 40 60 80 100 120 140 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example -60 -40 -20 Junction Temperature (C) Conduction Time (Cycles at 60Hz) Rev.2.00, Nov.09.2004, page 3 of 6 BCR3KM-12 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 5.0 Transient Thermal Impedance (C/W) 102 7 5 4 3 2 On-State Power Dissipation (W) 4.5 4.0 360 Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 160 Allowable Ambient Temperature vs. RMS On-State Current 120 100 Curves apply regardless of conduction angle 80 60 40 Ambient Temperature (C) 140 140 120 100 Case Temperature (C) 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 80 All fins are black painted aluminum and greased 60 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 360 Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Allowable Ambient Temperature vs. RMS On-State Current 160 Repetitive Peak Off-State Current vs. Junction Temperature 105 7 5 3 2 Typical Example Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 RMS On-State Current (A) Junction Temperature (C) Rev.2.00, Nov.09.2004, page 4 of 6 BCR3KM-12 Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 103 7 5 4 3 2 Latching Current vs. Junction Temperature 103 7 5 3 2 Typical Example Latching Current (mA) Distribution T2+, G- Typical Example 102 7 5 3 2 102 7 5 4 3 2 101 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 100 T2+, G+ Typical Example T2-, G- 0 20 40 60 80 100 120 140 -60 -40 -20 Junction Temperature (C) Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 Typical Example Tj = 125C III Quadrant I Quadrant 0 20 40 60 80 100120 140 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) 103 7 5 4 3 2 Gate Trigger Characteristics Test Circuits 6 6 IRGT III IRGT I IFGT I Typical Example 6V V A 330 6V V A 330 102 7 5 4 3 2 Test Procedure I 6 Test Procedure II 101 0 10 6V 2 3 4 5 7 101 2 3 4 5 7 102 A V 330 Gate Current Pulse Width (s) Test Procedure III Rev.2.00, Nov.09.2004, page 5 of 6 BCR3KM-12 Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 0.3 2.8 0.2 15 0.3 3 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR3KM-12RA BCR3KM-12RA-A8 Straight type Plastic Magazine (Tube) 50 Type name +RA Lead form Plastic Magazine (Tube) 50 Type name +RA - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.09.2004, page 6 of 6 2.6 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. 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Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
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